Emerging Nanoelectronics Through Two- and Three-Dimensional Materials Analysis
Emerging nanoelectronics for logic and memory at the 10nm node and beyond, are based on devices increasingly smaller, more three-dimensional in shape and containing even more types of materials.
Evaluating nanometre-scale features of such devices, including carrier profiling, strain, electrical and chemical properties represents a huge challenge for metrology. Here, after introducing the current and proposed logic and memory devices at advanced nodes, dr Celano will present dedicated two- and three-dimensional analysis methods to merge our present capability of materials characterization with site-specific and failure analysis.
Different techniques are presented and combined to maximize our sensing capability and boost the process development of various emerging technologies, including fin-based field-effect transistors (FinFET), resistive switching non-volatile memories and atomically-thin switches based on 2D transition metal dichalcogenides.