X-ray based dimensional metrology for next generation nanoelectronics
The microelectronics industry continues to shrink the size and increase the complexity of electronic devices as they follow Moore’s Law. Following the semiconductor technology roadmap to sub-10 nm devices presents tremendous challenges for both metrology and patterning technology. We will start by discussing the development of a small angle X-ray scattering (SAXS) method called critical-dimension (CD) SAXS for measuring the shape of 3D nanoscale devices such as gate-all around transistors, finFETs, and 3D NAND flash memory structures. The CDSAXS method is now being commercially developed and evaluated in fabs. We will then discuss new soft X-ray measurement methods being developed to characterize next generation lithographic technologies including block copolymer (BCP) directed self assembly (DSA) patterns and EUV photoresists. Soft X-rays allow resonant contrast based on chemical functional group. We will show how we can measure nm-scale changes in chemistry in organic nanostructures such as BCPs and photoresist. These measurements allow critical insights into the DSA and EUV exposure processes.
R. Joseph Kline leads the Dimensional Metrology for Nanomanufacturing project at NIST and researches X-ray based dimensional metrology of nanostructures for the semiconductor industry. He received his Ph.D. in Materials Science and Engineering at Stanford University in 2005. He has published more than 90 articles, 4 book chapters, and given more than 50 invited presentations. He received the 2012 Presidential Early Career Award for Science and Engineering, the 2018 Department of Commerce Gold Award, and the 2018 Arthur S. Flemming Award.